4.6 Article

60-GHz Compact Dual-Mode On-Chip Bandpass Filter Using GaAs Technology

期刊

IEEE ELECTRON DEVICE LETTERS
卷 42, 期 8, 页码 1120-1123

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3091277

关键词

Bandpass filter; GaAs technology; millimeter wave circuits; on-chip devices

资金

  1. JSPS Postdoctoral Fellowship for Research in Japan [FY2019]
  2. Siyuan Scholar Fellowship of XJTU [P19350, JP19F19350]

向作者/读者索取更多资源

This paper presents a 60-GHz compact dual-mode on-chip bandpass filter using gallium arsenide technology, with an LC equivalent circuit model constructed to analyze the transmission poles and zeros. A prototype was fabricated and tested, showing good agreement between simulated and measured results. The measured performance includes a center frequency of 58.7 GHz, a bandwidth of 18.4%, and a minimum insertion loss of 2.42 dB within the passband, with a chip size of approximately 0.158 mm x 0.344 mm (excluding feedings).
A 60-GHz compact dual-mode on-chip bandpass filter (BPF) is presented using gallium arsenide (GaAs) technology. To demonstrate the working mechanism of the proposed BPF, an LC equivalent circuit model is conceived and analyzed for further investigation of the transmission poles and zeros. Finally, a prototype of the BPF is fabricated and tested to validate the proposed idea, whose simulated and measured results are in good agreement. The measurements show that it has a center frequency of 58.7 GHz with a bandwidth of 18.4%, and the minimum insertion loss within the passband is 2.42 dB. The chip size, excluding the feedings, is about 0.158 mm x 0.344 mm.

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