Low-Frequency Noise Characteristics of Inkjet-Printed Electrolyte-Gated Thin-Film Transistors

Low-frequency noise is a critical characteristic of transistors, but there are only a few experimental works on the noise in printed electronics. In this work, we characterize the low-frequency noise of inkjet-printed electrolyte-gated thin-film transistors (EGTs) with indium-oxide semiconductors. We confirm that the carrier number fluctuation with correlated mobility fluctuation is the dominating noise generation mechanism. Also, we present the benchmark analysis on the noise level of various thin-film technologies. Notably, the extracted value of trap density near the insulator-channel interface is high, indicating an inferior quality of solution-processed and inkjet-printed thin-films. However, because of electrolyte-gating, the large areal gate capacitance compensates the negative effect of the high trap density, effectively reducing the flat-band voltage noise. As a result, the normalized drain current noise is considerably lower than solution-processed transistors and comparable with sputtered inorganic transistors with dielectric gating. This renders the electrolyte-gating approach useful in reducing the noise for printed/solution-based transistors, suitable for low-noise applications.

Automated summary

This study characterized the low-frequency noise of inkjet-printed electrolyte-gated thin-film transistors and identified the dominating noise generation mechanism. Benchmark analysis on the noise level of various thin-film technologies showed that the electrolyte-gating approach effectively reduces transistor noise levels.