High-k Oxide Field-Plated Vertical (001) β-Ga2O3 Schottky Barrier Diode With Baliga's Figure of Merit Over 1 GW/cm2

We report a vertical (001) beta-Ga2O3 field-plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 mu m was used to enable a punch-through (PT) field profile and very low differential specific on-resistance (Ron-sp) of 0.32 m Omega-cm(2). The extreme permittivity field plate oxide facilitated the lateral spread of the electric field profile beyond the field plate edge and enabled a breakdown voltage (V-br) of 687 V. The edge termination efficiency increases from 13.2 % for non-field plated structure to 61 % for high permittivity field plate structure. The surface breakdown electric field was extracted to be 5.45 MV/cm at the center of the anode region using TCAD simulations. The high permittivity field plated SBD demonstrated a record high Baliga's figure of merit (BFOM) of 1.47 GW/cm(2) showing the potential of Ga2O3 power devices for multi-kilovolt class applications.

Automated summary

By introducing a novel extreme permittivity dielectric field oxide, a vertical (001) beta-Ga2O3 field-plated Schottky barrier diode with high breakdown voltage was successfully fabricated in this study. TCAD simulations show that the surface breakdown electric field of the device reaches as high as 5.45 MV/cm, demonstrating the huge potential of Ga2O3 power devices for multi-kilovolt class applications.