Wakeup-Free and Endurance-Robust Ferroelectric Field-Effect Transistor Memory Using High Pressure Annealing

Wakeup-free and endurance-robust HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) was fabricated on a silicon-on-insulator substrate. After a high-pressure forming gas annealing as the last alloy step, the performance and endurance of the FeFETs were significantly improved by trap states reduction, polarization enhancement, and wake-up elimination. As the result, the FeFETs show superior endurance exceeding 10(10) cycles and robust retention behavior at program/erase biases of +/- 3.5V and pulse width of 100 ns. These results indicate that appropriate thermal treatment for the interlayer and ferroelectric material could substantially improve FeFET performance and reliability.

Automated summary

The HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) fabricated on a silicon-on-insulator substrate showed improved performance and durability after high-pressure forming gas annealing, leading to superior endurance exceeding 10(10) cycles and robust retention behavior. Appropriate thermal treatment for the interlayer and ferroelectric material significantly enhanced FeFET performance and reliability.