4.2 Article

On a CVD-formed carbon nitrogen (C3N) film doped with Cu and Zn

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TAYLOR & FRANCIS INC
DOI: 10.1080/1536383X.2021.1938001

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Carbon nitride; carbon nitrogen film; doped carbon nitrogen film; C3N

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A carbon nitrogen film was successfully formed using melamine cyanurate as a precursor, showing a layered structure with embedded particles of zinc and copper compounds on the surface. The band gap of the film was measured to be 2.06 eV, lower than that of conventional g-C3N4. The material's formula closely resembles C3N, also known as bidimensional polyaniline.
A carbon nitrogen film was formed by chemical vapor deposition on a brass sheet starting from cyanurate of melamine as a precursor, at a temperature of 600 degrees C. The film was easily detached, and thoroughly characterized by means of various techniques, including X-ray photoelectron spectroscopy, X-ray diffraction, UV-Vis and infrared spectroscopies, and scanning and transmission microscopy. The material exhibited a layered structure, with many particles of zinc and copper compounds embedded on the surface. The band gap was found to be 2.06 eV, much lower than that of conventional g-C3N4, with values between 3.0 and 2.7 eV. The formula is close to that of C3N, also known as bidimensional polyaniline.

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