期刊
ENERGIES
卷 14, 期 13, 页码 -出版社
MDPI
DOI: 10.3390/en14133938
关键词
copper indium gallium selenide; metal halide; recrystallization; solar cell
资金
- U.S. Department of Energy [DE-EE0007551]
Cu(In,Ga)Se-2 thin films and devices were fabricated using a modified three-stage process, with a copper chloride vapor treatment introduced to enhance film properties. After recrystallization, films showed larger grains, but not all parameters of the solar cells were enhanced, resulting in only a 15% increase in device efficiency.
Cu(In,Ga)Se-2 (or CIGS) thin films and devices were fabricated using a modified three-stage process. Using high deposition rates and a low temperature during the process, a copper chloride vapor treatment was introduced in between the second and third stages to enhance the films properties. X-ray diffraction and scanning electron microscopy demonstrate that drastic changes occur after this recrystallization process, yielding films with much larger grains. Secondary ion mass spectrometry shows that the depth profile of many elements is not modified (such as Cu, In and Se) while others change dramatically (such as Ga and Na). Because of the competing effects of these changes, not all parameters of the solar cells are enhanced, yielding an increase of 15% in the device efficiency at the most.
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