Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell

Basic knowledge about the factors and mechanisms affecting the performance of solar cells and their identification is essential when thinking of future improvements to the device. Within this paper, we investigated the current transport mechanism in GaAsN p-i-n solar cells grown with atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE). We examined the electro-optical and structural properties of a GaAsN solar cell epitaxial structure and correlated the results with temperature-dependent current-voltage measurements and deep level transient spectroscopy findings. The analysis of J-V-T measurements carried out in a wide temperature range allows for the determination of the dominant current transport mechanism in a GaAsN-based solar cell device and assign it a nitrogen interstitial defect, the presence of which was confirmed by DLTFS investigation.

Automated summary

This study investigates the current transport mechanism in GaAsN solar cells grown with AP-MOVPE, examining their electro-optical and structural properties and correlating the results with temperature-dependent measurements. The analysis of J-V-T measurements allows for the determination of the dominant current transport mechanism in GaAsN-based solar cells, assigning it to a nitrogen interstitial defect confirmed by DLTFS investigation.