期刊
ENERGIES
卷 14, 期 16, 页码 -出版社
MDPI
DOI: 10.3390/en14164986
关键词
crystalline silicon; doping concentration; solar cells; PC1D; surface recombination velocity
资金
- Deanship of Scientific Research at King Khalid University, Abha, Saudi Arabia [RGP.1-397-42]
The study used PC1D simulation software to investigate the influence of various parameters on solar cell efficiency, identifying key factors in improving the efficiency of silicon solar cells.
Expeditious urbanization and rapid industrialization have significantly influenced the rise of energy demand globally in the past two decades. Solar energy is considered a vital energy source that addresses this demand in a cost-effective and environmentally friendly manner. Improving solar cell efficiency is considered a prerequisite to reinforcing silicon solar cells' growth in the energy market. In this study, the influence of various parameters like the thickness of the absorber or wafer, doping concentration, bulk resistivity, lifetime, and doping levels of the emitter and back surface field, along with the surface recombination velocity (front and back) on solar cell efficiency was investigated using PC1D simulation software. Inferences from the results indicated that the bulk resistivity of 1 Omega.cm; bulk lifetime of 2 ms; emitter (n(+)) doping concentration of 1 x 10(20) cm(-3) and shallow back surface field doping concentration of 1 x 10(18) cm(-3); surface recombination velocity maintained in the range of 10(2) and 10(3) cm/s obtained a solar cell efficiency of 19%. The Simulation study presented in this article allows faster, simpler, and easier impact analysis of the design considerations on the Si solar cell wafer fabrications with increased performance.
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