A comparative study on high temperature oxidation behavior of SiC, SiC-BN and SiBCN monoliths

In this study, the oxidation behavior and mechanism of SiBCN monoliths were compared with SiC and SiC-BN monoliths. At 1100-1300 degrees C, the oxide layers of SiC and SiBCN monoliths were relatively smooth and dense, while that of SiC-BN monoliths were destroyed by many bubbles. Further oxidized at 1500 degrees C, some cracks and bubbles appeared on the surfaces and interfaces of SiC-BN monoliths. The oxidation of SiC phases was thermodynamically unstable than that of C and BN, but the oxidation of BN and/or C occurred preferentially after considering the kinetic factors. BN(C) phase has a positive role on SiBCN oxidation resistance.

Automated summary

The study compared the oxidation behavior and mechanism of SiBCN monoliths with SiC and SiC-BN monoliths, revealing that SiBCN monoliths had better oxidation resistance due to the positive role of BN(C) phase during oxidation. At different temperatures, SiC and SiC-BN monoliths showed different levels of oxidation damage, with SiC-BN monoliths exhibiting more cracks and bubbles compared to SiC and SiBCN monoliths.