4.5 Article

Revealing the Pressure-Induced Softening/Weakening Mechanism in Representative Covalent Materials

期刊

CHINESE PHYSICS LETTERS
卷 38, 期 5, 页码 -

出版社

IOP PUBLISHING LTD
DOI: 10.1088/0256-307X/38/5/056101

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资金

  1. National Natural Science Foundation of China [51672015]
  2. National Key Research and Development Program of China [2016YFC1102500, 2017YFB0702100]
  3. 111 Project [B17002]
  4. Fundamental Research Funds for the Central Universities
  5. European Regional Development Fund in the IT4Innovations National Supercomputing Center-Path to Exascale Project within the Operational Programme for Research, Development and Education [CZ.02.1.01/0.0/0.0/16 013/0001791]
  6. Ministry of Education, Youth, and Sport of the Czech Republic [e-INFRA CZ-LM2018140]

向作者/读者索取更多资源

This study comprehensively investigates the mechanical properties of diamond, cubic boron nitride, silicon, and germanium under high pressure and reveals that all these materials exhibit pressure-enhanced ductility. The differences in the pressure-induced mechanical softening/weakening between these materials are attributed to their abnormal charge-depletion evolution under applied strain and the reduction of antibonding states below the Fermi level.
Diamond, cubic boron nitride (c-BN), silicon (Si), and germanium (Ge), as examples of typical strong covalent materials, have been extensively investigated in recent decades, owing to their fundamental importance in material science and industry. However, an in-depth analysis of the character of these materials' mechanical behaviors under harsh service environments, such as high pressure, has yet to be conducted. Based on several mechanical criteria, the effect of pressure on the mechanical properties of these materials is comprehensively investigated. It is demonstrated that, with respect to their intrinsic brittleness/ductile nature, all these materials exhibit ubiquitous pressure-enhanced ductility. By analyzing the strength variation under uniform deformation, together with the corresponding electronic structures, we reveal for the first time that the pressure-induced mechanical softening/weakening exhibits distinct characteristics between diamond and c-BN, owing to the differences in their abnormal charge-depletion evolution under applied strain, whereas a monotonous weakening phenomenon is observed in Si and Ge. Further investigation into dislocation-mediated plastic resistance indicates that the pressure-induced shuffle-set plane softening in diamond (c-BN), and weakening in Si (Ge), can be attributed to the reduction of antibonding states below the Fermi level, and an enhanced metallization, corresponding to the weakening of the bonds around the slipped plane with increasing pressure, respectively. These findings not only reveal the physical mechanism of pressure-induced softening/weakening in covalent materials, but also highlights the necessity of exploring strain-tunable electronic structures to emphasize the mechanical response in such covalent materials.

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