Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement

Effective probing current-induced magnetization switching is highly required in the study of emerging spin-orbit torque (SOT) effect. However, the measurement of in-plane magnetization switching typically relies on the giant/tunneling magnetoresistance measurement in a spin valve structure calling for complicated fabrication process, or the non-electric approach of Kerr imaging technique. Here, we present a reliable and convenient method to electrically probe the SOT-induced in-plane magnetization switching in a simple Hall bar device through analyzing the MR signal modified by a magnetic field. In this case, the symmetry of MR is broken, resulting in a resistance difference for opposite magnetization orientations. Moreover, the feasibility of our method is widely evidenced in heavy metal/ferromagnet (Pt/Ni20Fe80 and W/Co20Fe60B20) and the topological insulator/ferromagnet (Bi2Se3/Ni20Fe80). Our work simplifies the characterization process of the in-plane magnetization switching, which can promote the development of SOT-based devices.

Automated summary

The study of spin-orbit torque (SOT) effect requires an effective method for probing current-induced magnetization switching. Existing methods for measuring in-plane magnetization switching either involve complicated fabrication processes or non-electric techniques. In this research, a reliable and convenient method is proposed, which involves analyzing the modified MR signal by a magnetic field to electrically probe SOT-induced in-plane magnetization switching. The feasibility of this method is demonstrated in various material combinations. This work simplifies the characterization process of in-plane magnetization switching and contributes to the development of SOT-based devices.