Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode

A quasi-vertical GaN Schottky barrier diode with a hybrid anode structure is proposed to trade off the on-resistance and the breakdown voltage. By inserting a SiN dielectric between the anode metal with a relatively small length, it suppresses the electric field crowding effect without presenting an obvious effect on the forward characteristics. The enhanced breakdown voltage is ascribed to the charge-coupling effect between the insulation dielectric layer and GaN. On the other hand, the current density is decreased beneath the dielectric layer with the increasing length of the SiN, resulting in a high on-resistance. Furthermore, the introduction of the field plate on the side wall forms an metal-oxide-semiconductor (MOS) channel and decreases the series resistance, but also shows an obvious electric field crowding effect at the bottom of the mesa due to the quasi-vertical structure.

Automated summary

In this study, a quasi-vertical GaN Schottky barrier diode with a hybrid anode structure is proposed to optimize the on-resistance and breakdown voltage. The use of a SiN dielectric and a field plate structure helps to suppress the electric field crowding effect and reduce the series resistance. The enhanced breakdown voltage is attributed to the charge-coupling effect between the insulation dielectric layer and GaN.