Lateral β-Ga2O3 Schottky barrier diode fabricated on (-201) single crystal substrate and its temperature-dependent current-voltage characteristics

Lateral beta-Ga2O3 Schottky barrier diodes (SBDs) each are fabricated on an unintentionally doped (-201) n-type beta-Ga2O3 single crystal substrate by designing L-shaped electrodes. By introducing sidewall electrodes on both sides of the conductive channel, the SBD demonstrates a high current density of 223 mA/mm and low specific on-resistance of 4.7 m Omega.cm(2). Temperature-dependent performance is studied and the Schottky barrier height is extracted to be in a range between 1.3 eV and 1.35 eV at temperatures ranging from 20 degrees C to 150 degrees C. These results suggest that the lateral beta-Ga2O3 SBD has a tremendous potential for future power electronic applications.

Automated summary

Lateral beta-Ga2O3 Schottky barrier diodes with L-shaped electrodes were fabricated on an unintentionally doped (-201) n-type beta-Ga2O3 single crystal substrate. By introducing sidewall electrodes, the diode exhibited high current density and low specific on-resistance. Temperature-dependent performance analysis showed promising results, indicating the great potential of lateral beta-Ga2O3 SBDs for future power electronic applications.