Ternary Conductance Switching Realized by a Pillar[5]arene-Functionalized Two-Dimensional Imine Polymer Film

Nowadays, most manufacturing memory devices are based on materials with electrical bistability (i. e., 0 and 1) in response to an applied electric field. Memory devices with multilevel states are highly desired so as to produce high-density and efficient memory devices. Herein, we report the first multichannel strategy to realize a ternary-state memristor. We make use of the intrinsic sub-nanometer channel of pillar[5]arene and nanometer channel of a two-dimensional imine polymer to construct an active layer with multilevel channels for ternary memory devices. Low threshold voltage, long retention time, clearly distinguishable resistance states, high ON/OFF ratio (OFF/ON1/ON2=1 : 10 : 10(3)), and high ternary yield (75 %) were obtained. In addition, the flexible memory device based on 2DP(TPAZ+TAPB) can maintain its stable ternary memory performance after being bent 500 times. The device also exhibits excellent thermal stability and can tolerate a temperature as high as 300 degrees C. It is envisioned that the results of this work will open up possibilities for multistate, flexible resistive memories with good thermal stability and low energy consumption, and broaden the application of pillar[n]arene.

Automated summary

This study presents the first multichannel strategy to realize a ternary-state memristor, utilizing pillar[5]arene and a two-dimensional imine polymer to construct an active layer with multilevel channels for ternary memory devices. High-density and efficient memory devices were achieved with low threshold voltage, long retention time, clearly distinguishable resistance states, high ON/OFF ratio, and high ternary yield.