On the Origin of Room-Temperature Amplified Spontaneous Emission in CsPbBr3 Single Crystals

CsPbBr3 is an all-inorganic halide perovskite with excellent photoluminescence (PL) properties for laser applications. Amplified spontaneous emission (ASE) is a prerequisite for lasing and typically observed from low-dimensional CsPbBr3 nanostructures, where quantum confinement enhances ASE. However, a gain medium for lasing should be prepared into a robust bulk form that works under intense light illumination. Here, we demonstrate that bulk CsPbBr3 single crystals exhibit highly efficient ASE with a threshold of 46 MWcm(-2) at 520 nm, if PL reabsorption via the indirect Rashba gap is properly suppressed by thickness control. Based on a series of spectroscopic and microscopic measurements, we show that this below-the-gap absorption can significantly alter the PL feature and even the apparent color of the crystal depending on the crystal size. Our results show that a thin CsPbBr3 single crystal can be utilized for lasing applications when engineered into a submillimeter thickness for effective light-matter interaction.

Automated summary

Bulk CsPbBr3 single crystals exhibit highly efficient amplified spontaneous emission with a threshold of 46 MWcm(-2) at 520 nm, when properly suppressing photoluminescence reabsorption via the indirect Rashba gap. Thin CsPbBr3 single crystals engineered into submillimeter thickness can be utilized for lasing applications.