UV-assisted safe etching route for the synthesis of Mo2CTx MXene from Mo-In-C non-MAX phase

We report the synthesis of Mo2CTx MXene from the Mo-In-C non-MAX phase using UV-assisted safe etching in phosphoric acid followed by ultrasonic exfoliation. The EDX and XPS spectra confirm the selective etching of indium from the non-MAX phase stoichiometry and formation of Mo2CTx MXene. The structural characterization using X-Ray diffraction revealed the Mo-In-C non-MAX phase and Mo2CTx MXene with crystallite sizes 37.26 +/- 0.56 nm and 46.89 +/- 0.70 nm, respectively. The morphology of the samples analyzed using FESEM, confirmed the formation of the multilayered and monolayer 2D Mo2CTx. A slight increase in the interplanar spacing (similar to 0.921 angstrom) was observed in HRTEM images for Mo2CTx with respect to Mo-In-C. The synthesis of Mo2C MXene from a non- MAX phase using a hydrogen fluoride-free safe etching root unlocks the wide opportunity for the industrial bulk production of MXenes.

Automated summary

This study reported the synthesis of Mo2CTx MXene using UV-assisted safe etching in phosphoric acid followed by ultrasonic exfoliation from the Mo-In-C non-MAX phase. The selective etching of indium and structural characterization confirmed the formation of Mo2CTx MXene. The method used in this study unlocks the opportunity for industrial bulk production of MXenes.