Dominant formation of h-BC2N in h-BxCyNz films: CVD synthesis and characterization

Arranging carbon, boron, and nitrogen atoms in a sp(2) network can give rise to tunable electronic properties from insulators (h-BN) to metals (graphene). For semiconductor applications, the construction of a ternary structure (h-BxCyNz) is highly desirable, but its uniform and large-area synthesis has remained a great challenge. This challenge has been attempted by a facile chemical vapor deposition method with a single molecular precursor, N-tri-methyl borazine where boron, carbon, and nitrogen atoms are covalently bonded, onto Ni catalysts in conjunction with the quenching method after the synthesis. The atomic structure closely resembles h-BC2N as revealed by XPS (B:C:N similar to 1:1.8:1) and nanometer resolution EELS mapping, and the photoluminescence and electroluminescence observed from the h-BC2N film were in agreement, proving its well-established bandgap of 2.15 eV. As a practical application, the utilization of h-BC2N film for 2D light emitting diodes was demonstrated. Though films might have impurities such as small h-BN fragments and h-BxCyNz other than h-BC2N phase, we believe that this work provide a starting point of controlling the ternary BCN compounds that retain sp(2) hybridized chemical bonds. (C) 2021 Elsevier Ltd. All rights reserved.

Automated summary

By arranging carbon, boron, and nitrogen atoms in a sp(2) network, tunable electronic properties can be achieved, leading to the successful synthesis of a ternary structure h-BC2N with desirable electronic properties. This work provides insight into controlling BCN compounds that retain sp(2) hybridized chemical bonds.