期刊
BRAZILIAN JOURNAL OF PHYSICS
卷 51, 期 6, 页码 1501-1508出版社
SPRINGER
DOI: 10.1007/s13538-021-00953-0
关键词
SILAR; Diffraction; Room temperature ferromagnetism; DMS; Spintronics
In this research, Mn-doped ZnO thin films with different concentrations were grown on a glass substrate using the SILAR technique. The effects of dopant materials on the structural, morphological, optical, and magnetic properties of the films were studied. The results showed that dopants changed the surface morphology and optical properties of the films, with higher Mn concentrations exhibiting ferromagnetism. This transparent DMS material has potential applications in opto-electronics and spintronics.
In this research work, the different concentrations of Mn (0, 3, and 6%)-doped ZnO thin films were grown onto a glass substrate using cost-effective SILAR technique. The effects of dopant materials on the structural, morphological, optical, and magnetic properties of the thin films were investigated using X-ray diffraction (XRD), scanning electron microscope (SEM), photoluminescence (PL), and magnetic measurements (VSM studies) respectively. X-ray analysis revealed that the nano films were a polycrystalline in nature with the hexagonal structure. The predominant peak (002) appears with very high intensity in all the films and shifted to lower angle. The SEM images showed that the surface morphology of the thin films were modified due to the dopant materials. The spherical and nano flake grains were also reflected in the morphology of the nano films. The surface quality of the ZnO-Mn film increases with Mn doping, but no significant change in grain size can be seen from SEM images. The photoluminescence (PL) spectroscopy revealed the presence of various defects which were identified in the entire visible spectrum with increasing Mn%. The room temperature soft ferromagnetic measurements confirmed the presence of ferromagnetism in the higher Mn (6 at. %)-doped ZnO thin films. This transparent dilute magnetic semiconductor (DMS) material is suitable for opto-electronics and spintronics applications.
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