Hydrogen-driven surface amorphization of the transparent oxide semiconductor thin-films for photovoltaic applications

Crystalline transparent conductive oxides are promising candidates as front electrodes in electronic devices due to the high electron mobility and good optical transparency in the visible region. However, the rough surface morphology resulting from the grain growth during the deposition and post-annealing process triggers severe drawbacks in their thin-film applications. Here, we demonstrate the hydrogen-driven surface amorphization of the crystalline In?Sn?O (c-ITO) thin film. By introducing hydrogen gas during the deposition process, the surface of the c-ITO thin film is selectively amorphized, allowing for the smooth surface morphology while preserving the advantages of the crystalline thin film. The progressive surface amorphization of c-ITO thin film offers the tunability of the work function, leading to the improved power conversion efficiency of the thin-film solar cell. Our work provides a facile method to realize the smooth surface morphology of the c-ITO thin films, which can be further utilized for a wide range of crystalline thin films for optoelectronic applications.

Automated summary

The hydrogen-driven surface amorphization of crystalline In-Sn-O thin films allows for smooth surface morphology and tunability of the work function, leading to improved power conversion efficiency of thin-film solar cells. This method provides a facile way to realize smooth surface morphology of crystalline thin films for optoelectronic applications.