期刊
APPLIED SURFACE SCIENCE
卷 554, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2021.149661
关键词
Laser deposition; N-doped VO2 (M1) thin films; Raman spectroscopy; Electrical and optical properties; Energy band gap; Volume fraction calculations
类别
资金
- Canada Research Chair Program
- Natural Sciences and Engineering Research Council of Canada
This study investigates the impact of nitrogen doping on the electrical and optical properties of VO2 thin films, synthesized using reactive pulsed laser deposition with an innovative method. It was found that a doping percentage of 0.7% could decrease the phase transition temperature, and the IMT in nitrogen-doped VO2 films occurs through a percolation process, as deduced from various measurements.
This work reports the effect of nitrogen doping on the electrical and optical properties of VO2 thin films. An innovative method based on a VN target and an O-2 ambient gas was used to synthesize N:VO2 films on quartz substrates using reactive pulsed laser deposition (RPLD). The doping percentage was determined by elastic recoil distribution (ERD) measurements, while temperature-dependent Raman spectroscopy as well as electrical resistivity and infrared reflectance measurements were performed to investigate the effect of N-doping on the insulator monoclinic-to-metallic tetragonal phase transition (IMT) of VO2. A small doping percentage around 0.7 at.% was achieved, inducing a decrease of the transition temperature TIMT from 68 degrees C to 50 degrees C, with slightly reduced electrical contrast Delta R and optical contrast Delta A. By comparing the volume fraction of monoclinic phase, obtained from Raman data to the volume fraction of metallic phase deduced concurrently from both electrical and optical measurements, the IMT in our nitrogen-doped VO2 films occurs through a percolation process.
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