4.7 Article

Quantification of hydrogen in nanostructured hydrogenated passivating contacts for silicon photovoltaics combining SIMS-APT-TEM: A multiscale correlative approach

期刊

APPLIED SURFACE SCIENCE
卷 555, 期 -, 页码 -

出版社

ELSEVIER
DOI: 10.1016/j.apsusc.2021.149650

关键词

Secondary ion mass spectrometry (SIMS); Atom probe tomography (APT); Transmission electron microscopy (TEM); c-Si-solar cell; Correlative microscopy

资金

  1. Luxembourg National Research Fund (FNR) [C18/MS/12661114, INTER/SNF/16/11536628]
  2. Swiss National Science Foundation (SNF) [200021L_172924/1]
  3. Swiss National Science Foundation (SNF) [200021L_172924] Funding Source: Swiss National Science Foundation (SNF)

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Multiscale characterization of the hydrogenation process of silicon solar cell contacts based on c-Si/SiOx/ncSiCx(p) has been performed by combining dynamic secondary ion mass-spectrometry (D-SIMS), atom probe tomography (APT), and transmission electron microscopy (TEM). This new methodology sheds new insights on hydrogen distribution in technologically important photovoltaic materials.
Multiscale characterization of the hydrogenation process of silicon solar cell contacts based on c-Si/SiOx/ncSiCx(p) has been performed by combining dynamic secondary ion mass-spectrometry (D-SIMS), atom probe tomography (APT), and transmission electron microscopy (TEM). These contacts are formed by high-temperature firing, which triggers the crystallization of SiCx, followed by a hydrogenation process to passivate remaining interfacial defects. Due to the difficulty of characterizing hydrogen at the nm-scale, the exact hydrogenation mechanisms have remained elusive. Using a correlative TEM-SIMS-APT analysis, we are able to locate hydrogen trap sites and quantify the hydrogen content. Deuterium (D), a heavier isotope of hydrogen, is used to distinguish hydrogen introduced during hydrogenation from its background signal. D-SIMS is used, due to its high sensitivity, to get an accurate deuterium-to-hydrogen ratio, which is then used to correct deuterium profiles extracted from APT reconstructions. This new methodology to quantify the concentration of trapped hydrogen in nm-scale structures sheds new insights on hydrogen distribution in technologically important photovoltaic materials.

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