期刊
APPLIED PHYSICS LETTERS
卷 119, 期 5, 页码 -出版社
AIP Publishing
DOI: 10.1063/5.0053252
关键词
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资金
- Shenzhen Science and Technology Innovation Commission [SGDX2020110309460101]
Reconstructing the surface of the p-GaN layer into GaON enhances the immunity to hot electron bombardment in HEMTs, improving long-term reliability. This is achieved through a high-temperature thermal process and remote oxygen plasma treatment for surface reconstruction.
The surface of the p-GaN layer in Schottky-type p-GaN gate high-electron-mobility transistors (HEMTs) can be reinforced with enhanced immunity to hot electron bombardment by reconstructing the surface region of p-GaN into GaON. The surface region of p-GaN is treated by remote oxygen plasma and subsequently annealed at 800 degrees C, thereby becoming a thin crystalline gallium oxynitride (GaON) layer that will be in direct contact with the Schottky metal. The GaON exhibits a lower valence band maximum energy than that of the p-GaN, which leads to a higher Schottky barrier at the metal/GaON interface to holes and, thus, greatly suppresses the forward gate leakage. More importantly, with higher thermodynamic stability and a larger bandgap of similar to 4.1 eV, the GaON reinforces the susceptible metal/p-GaN interface against the hot electrons and, thus, substantially enhances the long-term gate reliability of p-GaN gate HEMTs under forward bias stress. The high-temperature thermal process is indispensable for the surface reconstruction, without which the plasma oxidation only reduces the gate leakage but fails to prolong the time-dependent gate breakdown lifetime. Published under an exclusive license by AIP Publishing.
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