Impact of electrolyte density on synaptic characteristics of oxygen-based ionic synaptic transistor

An oxygen-based ionic synaptic transistor (O-IST) is a promising synaptic element for neuromorphic computing. In this study, we demonstrated that the density of the electrolyte plays a key role in achieving excellent synaptic characteristics in an O-IST. In a Pr0.7Ca0.3MnO3-based O-IST, we precisely controlled the density of the HfOx electrolyte and found that a low-density electrolyte could improve the ion mobility. Owing to the improved ion mobility and controlled ion migration, we demonstrated that excellent synaptic characteristics, such as a wide dynamic range, linear weight update, low operating voltage operations, and stable cyclic operation, were achieved. Finally, we confirmed an improved pattern recognition accuracy using an O-IST with an HfOx electrolyte of optimal density.

Automated summary

The study demonstrates that controlling the density of the electrolyte is crucial in achieving excellent synaptic characteristics in an oxygen-based ionic synaptic transistor. By precisely controlling the density of the HfOx electrolyte, improved ion mobility and controlled ion migration were achieved, resulting in wide dynamic range, linear weight update, low operating voltage operations, and stable cyclic operations. Ultimately, an improved pattern recognition accuracy was confirmed using an O-IST with an optimal density HfOx electrolyte.