Reinforcement of power factor in N-type multiphase thin film of Si1-x-yGexSny by mitigating the opposing behavior of Seebeck coefficient and electrical conductivity

As the first-generation semiconductor, silicon (Si) exhibits promising prospects in thermoelectric (TE) convention application with the advantages of un-toxic, abundant, robust, and compliant to the integrated circuit. However, Si-based TE materials are always implemented for high-temperature application and deficient at room temperature (RT) ambience. This study displays an N-type Si1-x-yGexSny thin film by carrying out the strategy of metallic modulation doping for enhancing its power factor (PF). It was distinct to observe the extra carriers poured from the precipitated Sn particles without prominent degradation of mobility while sustaining appreciable thermal conductivity. The PF of 12.21 mu W cm(-1) K-2 and zT of 0.27 were achieved at 125 degrees C, which illustrated the significant potential for implementation at near RT ambiance. Published under an exclusive license by AIP Publishing. https://doi.org/10.1063/5.0062339

Automated summary

Silicon shows promise in thermoelectric applications, but faces challenges at room temperature. By employing metallic modulation doping, the power factor of N-type Si1-x-yGexSny thin film can be significantly enhanced, demonstrating significant potential for implementation near room temperature.