期刊
APPLIED PHYSICS LETTERS
卷 118, 期 21, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/5.0052600
关键词
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资金
- IPVF [ANR-IEED-002-02]
- French ANR project ICEMAN [ANR-19-CE05-0019]
- United States Department of Energy EPSCoR Program
- United States Department of Energy, Office of Basic Energy Sciences, Materials Science and Energy Division [DE-SC0019384]
- National Science Foundation CAREER Award [1847129]
- U.S. Department of Energy (DOE) [DE-SC0019384] Funding Source: U.S. Department of Energy (DOE)
Increasing the thickness of the AlAsSb barrier material reduces the relaxation of hot carriers, leading to improved power conversion efficiency of photovoltaic solar cells.
One of the main loss mechanisms in photovoltaic solar cells is the thermalization of photogenerated hot carriers via phonon-mediated relaxation. By inhibiting these relaxation mechanisms and reducing thermalization losses, it may be possible to improve the power conversion efficiency of solar cells beyond the single gap limit. Here, type-II InAs/AlAsSb multi-quantum well (MQW) structures are investigated to study the impact of the phononic properties of the AlAsSb barrier material in hot carrier thermalization. Experimental and theoretical results show that by increasing the barrier thickness (increasing the relative contribution of AlAsSb content in the superlattices), the relaxation of hot carriers is reduced as observed in power-dependent photoluminescence and thermalization analysis. This is attributed to an increase in the phononic bandgap of the MQW with increasing AlAsSb composition reducing the efficiency of the dominant Klemens mechanism as the phononic properties shift toward a more AlSb-like behavior.
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