4.6 Article

Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Engineering, Electrical & Electronic

A cryogenic CMOS chip for generating control signals for multiple qubits

S. J. Pauka et al.

Summary: The study introduces a CMOS-based platform capable of generating multiple electrical signals for controlling qubits at 100 mK. By using on-chip circuit cells based on switched capacitors, the platform demonstrates the ability to generate static and dynamic voltages for parallel qubit control. Measurements show an average power dissipation of 18 nW per cell for generating 100 mV control pulses, suggesting potential scalability for a large system cooled by a commercially available dilution refrigerator.

NATURE ELECTRONICS (2021)

Article Engineering, Electrical & Electronic

Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors

Arnout Beckers et al.

IEEE ELECTRON DEVICE LETTERS (2020)

Article Engineering, Electrical & Electronic

Cryo-CMOS Circuits and Systems for Quantum Computing Applications

Bishnu Patra et al.

IEEE JOURNAL OF SOLID-STATE CIRCUITS (2018)

Article Engineering, Electrical & Electronic

Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures

Rosario M. Incandela et al.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2018)

Article Engineering, Electrical & Electronic

Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K

Arnout Beckers et al.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2018)

Review Engineering, Electrical & Electronic

Physics and performance of nanoscale semiconductor devices at cryogenic temperatures

F. Balestra et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2017)

Article Engineering, Electrical & Electronic

A capacitorless double-gate DRAM cell

C Kuo et al.

IEEE ELECTRON DEVICE LETTERS (2002)