Room temperature depinning of the charge-density waves in quasi-two-dimensional 1T-TaS2 devices

We report on the depinning of nearly commensurate charge-density waves in 1T-TaS2 thin films at room temperature. A combination of the differential current-voltage measurements with the low-frequency noise spectroscopy provides unambiguous means for detecting the depinning threshold field in quasi-2D materials. The depinning process in 1T-TaS2 is not accompanied by an observable abrupt increase in electric current-in striking contrast to depinning in the conventional charge-density-wave materials with quasi-1D crystal structure. We explained it by the fact that the current density from the charge-density waves in the 1T-TaS2 devices is orders of magnitude smaller than the current density of the free carriers available in the discommensuration network surrounding the commensurate charge-density wave islands. The depinning fields in 1T-TaS2 thin-film devices are several orders of magnitude larger than those in quasi-1D van der Waals materials. Obtained results are important for the proposed applications of the charge-density wave devices in electronics.

Automated summary

This study focuses on the depinning of nearly commensurate charge-density waves in 1T-TaS2 thin films at room temperature. The depinning process in 1T-TaS2 does not show a noticeable increase in electric current, unlike conventional charge-density-wave materials with quasi-1D crystal structure. The results suggest important implications for potential applications of charge-density wave devices in electronics.