Size-independent peak external quantum efficiency (>2%) of InGaN red micro-light-emitting diodes with an emission wavelength over 600 nm

Red micro-light-emitting diodes (mu LEDs) have been generated significant interest for the next generation mu LEDs displays. It has been shown that the external quantum efficiency (EQE) of AlInGaP red mu LEDs markedly decreases as the size goes to very small dimension. Here, we demonstrate size-independent peak EQE of 611 nm InGaN red mu LEDs. Packaged mu LEDs show a peak EQE varied from 2.4% to 2.6% as the device area reduces from 100 x 100 to 20 x 20 mu m(2). These results demonstrate the promising potential for realizing high efficiency red mu LED with very small size using InGaN materials.

Automated summary

The study demonstrates the size-independent peak EQE of InGaN red mu LEDs, with the peak EQE of packaged mu LEDs ranging from 2.4% to 2.6% as the device area decreases. These results suggest the promising potential of high efficiency red mu LEDs with very small size using InGaN materials.