In situ Y2O3 on p-In0.53Ga0.47As-Attainment of low interfacial trap density and thermal stability at high temperatures

By in situ depositing Y on a pristine p-In As surface under ultra-high vacuum, we have attained a low interfacial trap density (D from the mid-gap to the valence band edge. The D values were extracted from the conductance contours measured from 300 K to 77 K. The small frequency dispersions of 1.2%/dec (300 K) and 0.28%/dec (77 K) in the accumulation region of the capacitance-voltage (CV) characteristics and very small frequency-dependent flatband voltage shifts of 0.021 V/dec (300 K) and 0.011 V/dec (77 K) indicate low border trap densities and low D's; these experimental results have not been achieved in previous reports of oxide/p-In values, small CV frequency dispersions, and an abrupt interface without inter-diffusion in cross-sectional scanning transmission electron microscopy images. Our work has demonstrated a long-sought remedy for the effective passivation of p-type InAs, paving the way to high-performance electronic and optoelectronic In As devices.

Automated summary

By depositing Y on a pristine p-InAs surface under ultra-high vacuum conditions, the researchers achieved low interfacial trap density, paving the way for effective passivation of p-type InAs and high-performance electronic and optoelectronic InAs devices.