Spin dynamics in GaN/Al0.1Ga0.9N quantum well with complex band edge structure

Spectrally distinguished spin relaxation dynamics in a single GaN/Al0.1Ga0.9N quantum well was investigated by a time-resolved Kerr rotation spectrum at room temperature. Three spin relaxation processes were well distinguished by a photon energy upon the excitation energy being resonated with the bandgap of various layers. It is observed that the electron spin relaxation time of 7 ps in a GaN quantum well is much shorter than that of 140 ps in an Al0.1Ga0.9N barrier layer due to the considerable polarization electric field at a GaN/Al0.1Ga0.9N heterointerface. For electrons in bulk GaN and Al0.1Ga0.9N, the dominant role of electron-photon scattering and alloy disorder scattering in the anisotropic D'yakonov-Perel' (DP) relaxation was revealed by the photoexcited electron density and magnetic field dependence of the spin relaxation time. Published under an exclusive license by AIP Publishing.

Automated summary

The spectrally distinguished spin relaxation dynamics in a single GaN/Al0.1Ga0.9N quantum well were investigated using time-resolved Kerr rotation spectrum at room temperature. Three distinct spin relaxation processes were observed, with different relaxation times for electrons in GaN quantum well and Al0.1Ga0.9N barrier layer due to the polarization electric field at the heterointerface. The dominant role of electron-photon scattering and alloy disorder scattering in the anisotropic D'yakonov-Perel' (DP) relaxation was revealed for electrons in bulk GaN and Al0.1Ga0.9N.