Large microwave inductance of granular boron-doped diamond superconducting films

Boron-doped diamond granular thin films are known to exhibit superconductivity with an optimal critical temperature of T-c = 7.2 K. Here, we report the measured in-plane complex surface impedance of boron-doped diamond films in the microwave frequency range using a resonant technique. Experimentally measured inductance values are in good agreement with estimates obtained from the normal state sheet resistance of the material. The magnetic penetration depth temperature dependence is consistent with that of a fully gapped s-wave superconductor. Boron-doped diamond films should find application where high kinetic inductance is needed, such as microwave kinetic inductance detectors and quantum impedance devices.

Automated summary

Boron-doped diamond granular thin films are found to exhibit superconductivity with an optimal critical temperature of T-c = 7.2 K. The in-plane complex surface impedance of these films in the microwave frequency range was measured using a resonant technique, showing potential applications in high kinetic inductance devices such as microwave kinetic inductance detectors and quantum impedance devices. The experimental results suggest that the magnetic penetration depth temperature dependence is consistent with that of a fully gapped s-wave superconductor.