Mechanisms for long carrier lifetime in Cd(Se)Te double heterostructures

II-VI semiconductors are used in numerous electro-optical applications. For example, CdTe-based solar technology is cost competitive with other electricity generation sources, yet there is still significant room to improve. Carrier lifetime has historically been well below the radiative recombination limit. Lifetimes reaching beyond 100 ns can significantly enhance performance and enable novel device structures. Here, double heterostructures (DHs) with passivated interfaces demonstrate lifetimes exceeding 1 mu s, yet this appears only for CdSeTe and not for CdTe DHs. We compare the passivation mechanisms in CdTe and CdSeTe DHs. CdSeTe lifetimes on the order of 1 mu s correspond to a combination of superior intragrain lifetime, extremely low grain boundary recombination and greater Te4+ interfacial presence compared to CdTe.

Automated summary

The longer lifetimes of CdSeTe semiconductors are attributed to their superior intragrain lifetime, extremely low grain boundary recombination, and greater Te4+ interfacial presence compared to CdTe.