期刊
APPLIED PHYSICS LETTERS
卷 118, 期 21, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/5.0051552
关键词
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资金
- Development Program of China [2017YFB0405000, 2017YFB0405001]
- National Natural Science Foundation of China [61874004]
- Beijing Municipal Science & Technology Commission [Z201100004520004]
- Beijing Nova Program from Beijing Municipal Science & Technology Commission [Z201100006820137, Z201100006820081]
The research demonstrated non-polar GaN power diodes with true-lateral p-n and metal-semiconductor junctions on foreign substrates, showing potential for high power applications.
We have demonstrated non-polar GaN power diodes (Schottky barrier diode and p-n junction diode) on foreign substrates featuring the true-lateral p-n and metal-semiconductor junctions. The diodes were fabricated on GaN islands laterally overgrown on the mask-patterned sapphire and Si substrates by metalorganic vapor phase epitaxy. The anode and cathode were formed on the opposed a-plane sidewalls of the island, making the device architecture essentially like the 90 degrees rotation of the desired true-vertical power diodes. The ideality factor of the Schottky barrier diode remained 1.0 (from 1.00 to 1.05) over 7 decades in current. Specifically, a high critical electric field of 3.3 MV/cm was demonstrated on the p-n junction diode with avalanche capability. These performances reveal a strong potential of non-polar GaN with the true-lateral junctions for high power applications.
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