4.5 Article

Photoionization cross section ratio of nitrogen-site carbon in GaN under sub-bandgap-light irradiation determined by isothermal capacitance transient spectroscopy

期刊

APPLIED PHYSICS EXPRESS
卷 14, 期 9, 页码 -

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IOP PUBLISHING LTD
DOI: 10.35848/1882-0786/ac16ba

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Gallium nitride; deep level; ICTS; carbon acceptor; hole trap

资金

  1. MEXT Research and development of next-generation semiconductor to realize energy-saving societyProgram [JPJ005357]

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The ratio is used to describe the relative efficiency of different atomic nuclei in the photoionization process.
The ratio of the photoionization cross sections (sigma(o)(n)/sigma(o)(p)

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