期刊
APPLIED PHYSICS EXPRESS
卷 14, 期 9, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.35848/1882-0786/ac16ba
关键词
Gallium nitride; deep level; ICTS; carbon acceptor; hole trap
资金
- MEXT Research and development of next-generation semiconductor to realize energy-saving societyProgram [JPJ005357]