High performance GaN-based monolithic bidirectional switch using diode bridges

A p-GaN gate high electron mobility transistor (HEMT) based monolithic bidirectional switch with diode bridge structures is demonstrated. The bidirectional switch features four recessed anode Schottky barrier diodes embedded in a p-GaN HEMT, which effectively reduces the on-state voltage and minimizes the parasitic elements. The proposed device exhibits a high threshold voltage of 1.84 V, a low on-state voltage of 1.13 V, and a high forward and reverse off-state breakdown voltages of similar to 1100 V. In addition, the function of the bidirectional switch as an AC power chopper is successfully verified.

Automated summary

The monolithic bidirectional switch based on p-GaN gate HEMT features four embedded Schottky barrier diodes, showing a high threshold voltage and low on-state voltage, suitable for AC power switching applications.