Density of states, DC conductivity and physical properties of Ag2S-Ge-Te-Se chalcogenide glassy system

Here, development of some Ag2S mixed chalcogenide glassy systems has been discussed in the light of DC conductivity model and variable range hopping model. X-ray diffraction (XRD) pattern has been collected to explore microstructure of them. Various nanophases such as Ag2Se and GeSe2 have been pointed out from XRD studies. Defects have been identified in the form of dislocation, and their roles in the electrical transport properties have been established. FE-SEM micrographs exhibit their amorphous nature with distributed sharper crystal-like structure. Optical phonon frequency may cause to enhance the structural vibrations by means of increasing DC electrical conductivity. Significant enhancement of density of states near Fermi level at low and high temperatures have been explained. Present glassy structure is expected to expand to reduce the scattering cross-section for getting higher values of N(E-F) at higher temperature up to a great extent.

Automated summary

The development of some Ag2S mixed chalcogenide glassy systems and their microstructure correlations with electrical transport properties have been discussed, with various nanophases and defects identified through XRD studies. The enhancement of structural vibrations due to optical phonon frequency and the explanation of increased density of states near the Fermi level at different temperatures were highlighted. The glassy structure is expected to expand to reduce scattering cross-section and achieve higher N(E-F) values at elevated temperatures.