4.8 Article

Electrical Loss Management by Molecularly Manipulating Dopant-free Poly(3-hexylthiophene) towards 16.93 % CsPbI2Br Solar Cells

期刊

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
卷 60, 期 30, 页码 16388-16393

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/anie.202105176

关键词

dopant-free; hole transporting layer; inorganic perovskite; solar cells; stability

资金

  1. National Natural Science Foundation of China [21922512, 21875264, 21975264]
  2. Chinese Academy of Sciences
  3. Energy Materials and Optoelectronics Unit of Songshan Lake Materials Laboratory, Natural Science Foundation of Beijing Municipality, Youth Innovation Promotion Association CAS [2191003]

向作者/读者索取更多资源

By manipulating the interaction between the polymer and small molecule, a strategy for managing electrical losses in inorganic cesium lead halide perovskite solar cells was developed, significantly increasing carrier mobility and reducing surface defect density, while also improving stability.
Inorganic cesium lead halide perovskites offer a pathway towards thermally stable photovoltaics. However, moisture-induced phase degradation restricts the application of hole transport layers (HTLs) with hygroscopic dopants. Dopant-free HTLs fail to realize efficient photovoltaics due to severe electrical loss. Herein, we developed an electrical loss management strategy by manipulating poly(3-hexylthiophene) with a small molecule, i.e., SMe-TATPyr. The developed P3HT/SMe-TATPyr HTL shows a three-time increase of carrier mobility owing to breaking the long-range ordering of edge-on P3HT and inducing the formation of face-on clusters, over 50 % decrease of the perovskite surface defect density, and a reduced voltage loss at the perovskite/HTL interface because of favorable energy level alignment. The CsPbI2Br perovskite solar cell demonstrates a record-high efficiency of 16.93 % for dopant-free HTL, and superior moisture and thermal stability by maintaining 96 % efficiency at low-humidity condition (10-25 % R. H.) for 1500 hours and over 95 % efficiency after annealing at 85 degrees C for 1000 hours.

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