Defect-Rich High-Entropy Oxide Nanosheets for Efficient 5-Hydroxymethylfurfural Electrooxidation

High-entropy oxides (HEOs), a new concept of entropy stabilization, exhibit unique structures and fascinating properties, and are thus important class of materials with significant technological potential. However, the conventional high-temperature synthesis techniques tend to afford micron-scale HEOs with low surface area, and the catalytic activity of available HEOs is still far from satisfactory because of their limited exposed active sites and poor intrinsic activity. Here we report a low-temperature plasma strategy for preparing defect-rich HEOs nanosheets with high surface area, and for the first time employ them for 5-hydroxymethylfurfural (HMF) electrooxidation. Owing to the nanosheets structure, abundant oxygen vacancies, and high surface area, the quinary (FeCrCoNiCu)(3)O-4 nanosheets deliver improved activity for HMF oxidation with lower onset potential and faster kinetics, outperforming that of HEOs prepared by high-temperature method. Our method opens new opportunities for synthesizing nanostructured HEOs with great potential applications.

Automated summary

A low-temperature plasma strategy was used to prepare defect-rich HEOs nanosheets with high surface area, which showed improved catalytic activity for organic compound oxidation and outperformed HEOs prepared by high-temperature methods. This method provides new opportunities for synthesizing nanostructured HEOs with great potential applications.