Sub-Nanometer Thick Wafer-Size NiO Films with Room-Temperature Ferromagnetic Behavior

Adding ferromagnetism into semiconductors attracts much attentions due to its potential usage of magnetic spins in novel devices, such as spin field-effect transistors. However, it remains challenging to stabilize their ferromagnetism above room temperature. Here we introduce an atomic chemical-solution strategy to grow wafer-size NiO thin films with controllable thickness down to sub-nanometer scale (0.92 nm) for the first time. Surface lattice defects break the magnetic symmetry of NiO and produce surface ferromagnetic behaviors. Our sub-nanometric NiO thin film exhibits the highest reported room-temperature ferromagnetic behavior with a saturation magnetization of 157 emu/cc and coercivity of 418 Oe. Attributed to wafer size, the easily-transferred NiO thin film is further verified in a magnetoresistance device. Our work provides a sub-nanometric platform to produce wafer-size ferromagnetic NiO thin films as atomic layer magnetic units in future transparent magnetoelectric devices.

Automated summary

This research introduces a novel atomic chemical-solution strategy to grow sub-nanometric NiO thin films with surface ferromagnetic behaviors. The thin film exhibits the highest reported room-temperature ferromagnetic behavior and can be used as atomic layer magnetic units in future transparent magnetoelectric devices.