4.8 Article

Supersaturation-Controlled Growth of Monolithically Integrated Lead-Free Halide Perovskite Single-Crystalline Thin Film for High-Sensitivity Photodetectors

期刊

ADVANCED MATERIALS
卷 33, 期 41, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202103010

关键词

lead-free halide perovskites; monolithical integration; photodetectors; single-crystalline thin films; supersaturation-controlled growth

资金

  1. National Key RAMP
  2. D Program of China [2017YFA0204600, 2018YFA0703700]
  3. National Natural Science Foundation of China [12061131009, 51872050]
  4. China Postdoctoral Science Foundation [2020M681165]
  5. Science and Technology Commission of Shanghai Municipality [19520744300, 18520744600]

向作者/读者索取更多资源

The monolithical integration of lead-free halide perovskite single-crystalline thin film (SCTF) with silicon wafer demonstrated enhanced device performance, significantly increased photoelectric sensitivity, high switching ratio, and fast response time compared to most reported lead-free halide perovskite photodetectors. This work not only provides insights into perovskite precursor solution chemistry, but also showcases the potential of integrating lead-free halide perovskite SCTF with silicon for high-performance photodetectors.
Monolithical integration of the promising optoelectronic material with mature and inexpensive silicon circuitry contributes to simplifying device geometry, enhancing performance, and expanding new functionalities. Herein, a lead-free halide perovskite Cs3Bi2I9 single-crystalline thin film (SCTF), with thickness ranging from 900 nm to 4.1 mu m and aspect ratio up to 1666, is directly integrated on various substrates including Si wafer, through a facile and low-temperature solution-processing method. The growth kinetics of the lead-free halide perovskite SCTF are elucidated by in situ observation, and the solution supersaturation is controlled to reduce the inverse-temperature crystallization nucleation density and elongate the evaporation growth. The excellent lattice match and band alignment between Si(111) and Cs3Bi2I9(001) facets promote photogenerated charge dissociation and extraction, resulting in boosting the photoelectric sensitivity by 10-200 times compared with photodetectors based on other substrates. More importantly, this silicon-compatible perovskite SCTF photodetector exhibits a high switching ratio of 3000 and a fast response of 1.5 mu s, which are higher than most reported state-of-the-art lead-free halide perovskite photodetectors. This work not only gives an in-depth understanding of the perovskite precursor solution chemistry, but also demonstrates the great potential of monolithical integration of lead-free halide perovskite SCTF with a silicon wafer for high-performance photodetectors.

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