期刊
ADVANCED MATERIALS
卷 33, 期 27, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202006761
关键词
2D III‐ nitride materials; density functional theory calculation; growth method; physicochemical properties
类别
资金
- National Science Fund for Distinguished Young Scholars [61725403]
- National Natural Science Foundation of China [61922078, 61874118, 61827813, 61974144]
- Strategic Priority Research Program of the Chinese Academy of Sciences [XDA22020602]
- Key-Area Research and Development Program of Guangdong Province [2020B010174003]
- Science and Technology Foundation of Shenzhen [JSGG20191129114216474]
- CAS Interdisciplinary Innovation Team
- Youth Innovation Promotion Association of CAS
- Open Project of State Key Laboratory of Functional Materials for Informatic
2D III-nitride materials have gained attention for their excellent properties and potential applications in electronic and optoelectronic devices. Current research focuses on the properties and growth methods of 2D h-BN and h-AlN, with discussions on future research directions.
2D III-nitride materials have been receiving considerable attention recently due to their excellent physicochemical properties, such as high stability, wide and tunable bandgap, and magnetism. Therefore, 2D III-nitride materials can be applied in various fields, such as electronic and photoelectric devices, spin-based devices, and gas detectors. Although the developments of 2D h-BN materials have been successful, the fabrication of other 2D III-nitride materials, such as 2D h-AlN, h-GaN, and h-InN, are still far from satisfactory, which limits the practical applications of these materials. In this review, recent advances in the properties, growth methods, and potential applications of 2D III-nitride materials are summarized. The properties of the 2D III-nitride materials are mainly obtained by first-principles calculations because of the difficulties in the growth and characterizations of these materials. The discussion on the growth of 2D III-nitride materials is focused on 2D h-BN and h-AlN, as the developments of 2D h-GaN and h-InN are yet to be realized. Therefore, applications have been realized mostly based on the 2D h-BN materials; however, many potential applications are cited for the entire range of 2D III-nitride materials. Finally, future research directions and prospects in this field are also discussed.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据