Reviving the Schottky Barrier for Flexible Polymer Dielectrics with a Superior 2D Nanoassembly Coating

The organic insulator-metal interface is the most important junction in flexible electronics. The strong band offset of organic insulators over the Fermi level of electrodes should theoretically impart a sufficient impediment for charge injection known as the Schottky barrier. However, defect formation through Anderson localization due to topological disorder in polymers leads to reduced barriers and hence cumbersome devices. A facile nanocoating comprising hundreds of highly oriented organic/inorganic alternating nanolayers is self-coassembled on the surface of polymer films to revive the Schottky barrier. Carrier injection over the enhanced barrier is further shunted by anisotropic 2D conduction. This new interface engineering strategy allows a significant elevation of the operating field for organic insulators by 45% and a 7x improvement in discharge efficiency for Kapton at 150 degrees C. This superior 2D nanocoating thus provides a defect-tolerant approach for effective reviving of the Schottky barrier, one century after its discovery, broadly applicable for flexible electronics.

Automated summary

A study shows that self-assembling nano layers on the surface of polymer films can restore the Schottky barrier at the interface of organic insulators and metals, increasing the operating field for organic insulators and improving discharge efficiency. This new interface engineering strategy effectively addresses the issue of defects caused by topological disorder in polymers.