A Review of Phototransistors Using Metal Oxide Semiconductors: Research Progress and Future Directions

Metal oxide thin-film transistors have been continuously researched and mass-produced in the display industry. However, their phototransistors are still in their infancy. In particular, utilizing metal oxide semiconductors as phototransistors is difficult because of the limited light absorption wavelength range and persistent photocurrent (PPC) phenomenon. Numerous studies have attempted to improve the detectable light wavelength range and the PPC phenomenon. Here, recent studies on metal oxide phototransistors are reviewed, which have improved the range of light wavelengths and the PPC phenomenon by introducing an absorption layer of oxide or non-oxide hybrid structure. The materials of the absorption layer applied to absorb long-wavelength light are classified into oxides, chalcogenides, organic materials, perovskites, and nanodots. Finally, next-generation convergence studies combined with other research fields are introduced and future research directions are detailed.

Automated summary

Research on metal oxide phototransistors is still in its early stages, with recent studies focusing on introducing absorption layers to improve the range of light wavelengths and the persistent photocurrent phenomenon. The materials used for the absorption layer are diverse, including oxides, chalcogenides, organic materials, perovskites, and nanodots.