期刊
ADVANCED FUNCTIONAL MATERIALS
卷 31, 期 30, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202102797
关键词
heterostructures; molecular beam epitaxy; silicene; stanene; Xenes
类别
资金
- EU
- H2020 research and innovation programme under the ERC-COG [772261]
- European Research Council (ERC) [772261] Funding Source: European Research Council (ERC)
The research introduces a concept of Xene heterostructure based on the epitaxial combination of silicene and stanene on Ag(111), demonstrating layer-by-layer growth and strong interactions between layers. The results represent a significant step towards filling the current gap in Xene heterostructures and may inspire new paths for atomic-scale materials engineering.
The synthesis of new Xenes and their potential applications prototypes have achieved significant milestones so far. However, to date the realization of Xene heterostructures in analogy with the well known van der Waals heterostructures remains an unresolved issue. Here, a Xene heterostructure concept based on the epitaxial combination of silicene and stanene on Ag(111) is introduced, and how one Xene layer enables another Xene layer of a different nature to grow on top is demonstrated. Single-phase (4 x 4) silicene is synthesized using stanene as a template, and stanene is grown on top of silicene on the other way around. In both heterostructures, in situ and ex situ probes confirm layer-by-layer growth without intercalations and intermixing. Modeling via density functional theory shows that the atomic layers in the heterostructures are strongly interacting, and hexagonal symmetry conservation in each individual layer is sequence selective. The results provide a substantial step toward currently missing Xene heterostructures and may inspire new paths for atomic-scale materials engineering.
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