4.8 Article

Neuromorphic Active Pixel Image Sensor Array for Visual Memory

期刊

ACS NANO
卷 15, 期 9, 页码 15362-15370

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.1c06758

关键词

neuromorphic engineering; visual memory; amorphous oxide semiconductor; phototransistor; active pixel sensor

资金

  1. National Research Foundation of Korea [2021R1A2B5B02002167, 2021M3F3A2A03017873, 2020M3H4A1A02084896, 2020R1I1A1A01070907]
  2. National Research Foundation of Korea [2020R1I1A1A01070907, 2020M3H4A1A02084896, 2021M3F3A2A03017873, 2021R1A2B5B02002167] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

Neuromorphic engineering has attracted attention for achieving next-generation artificial intelligence technologies in the field of electronics and photonics. An active pixel sensor array for neuromorphic photonics, based on an amorphous oxide semiconductor heterostructure, has been demonstrated to emulate human visual memory. The phototransistors in the pixels exhibit both photonic potentiation and depression characteristics, and the visual memory and forgetting behaviors can be successfully demonstrated without any software or simulation. This study provides valuable information for other neuromorphic devices and systems for next-generation artificial intelligence technologies.
Neuromorphic engineering, a methodology for emulating synaptic functions or neural systems, has attracted tremendous attention for achieving next-generation artificial intelligence technologies in the field of electronics and photonics. However, to emulate human visual memory, an active pixel sensor array for neuromorphic photonics has yet to be demonstrated, even though it can implement an artificial neuron array in hardware because individual pixels can act as artificial neurons. Here, we present a neuromorphic active pixel image sensor array (NAPISA) chip based on an amorphous oxide semiconductor heterostructure, emulating the human visual memory. In the 8 x 8 NAPISA chip, each pixel with a select transistor and a neuromorphic phototransistor is based on a solution-processed indium zinc oxide back channel layer and sputtered indium gallium zinc oxide front channel layer. These materials are used as a triggering layer for persistent photoconductivity and a high-performance channel layer with outstanding uniformity. The phototransistors in the pixels exhibit both photonic potentiation and depression characteristics by a constant negative and positive gate bias due to charge trapping/detrapping. The visual memory and forgetting behaviors of the NAPISA can be successfully demonstrated by using the pulsed light stencil method without any software or simulation. This study provides valuable information to other neuromorphic devices and systems for next-generation artificial intelligence technologies.

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