4.8 Article

Enhanced Piezoelectric Output Performance of the SnS2/SnS Heterostructure Thin-Film Piezoelectric Nanogenerator Realized by Atomic Layer Deposition

期刊

ACS NANO
卷 15, 期 6, 页码 10428-10436

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.1c02757

关键词

piezoelectric nanogenerator (PENG); 2D transition-metal dichalcogenides (TMDs); 2D heterostructure; atomic layer deposition (ALD); wearable sensor

资金

  1. Basic Science Research Program through the National Research Foundation of Korea [NRF-2020R1A4A2002021, NRF-2019R1A2C1010384]
  2. Samsung Electronics Co., Ltd.
  3. National Research Foundation of Korea [4299990113927] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

This study reports the formation of SnS2/SnS heterostructure thin film using ALD to enhance the output performance of a PENG. The heterostructure significantly increased the piezoelectric response, resulting in improved output voltage and current density. Thickness-controllable large-area uniform thin-film deposition via ALD ensures reproducible output performance and adjustability of output density depending on applications.
Recently, the inherent piezoelectric properties of the 2D transition-metal dichalcogenides (TMDs) tin mono- sulfide (SnS) and tin disulfide (SnS2) have attracted much attention. Thus the piezoelectricity of these materials has been theoretically and experimentally investigated for energy- harvesting devices. However, the piezoelectric output perform- ance of the SnS2- or SnS-based 2D thin film piezoelectric nanogenerator (PENG) is still relatively low, and the fabrication process is not suitable for practical applications. Here we report the formation of the SnS2/SnS heterostructure thin film for the enhanced output performance of a PENG using atomic layer deposition (ALD). The piezoelectric response of the heterostructure thin film was increased by similar to 40% compared with that of the SnS2 thin film, attributed to large band offset induced by the heterojunction formation. Consequently, the output voltage and current density of the heterostructure PENG were 60 mV and 11.4 nA/cm(2) at 0.6% tensile strain, respectively. In addition, thickness-controllable large-area uniform thin-film deposition via ALD ensures that the reproducible output performance is achieved and that the output density can be lithographically adjusted depending on the applications. Therefore, the SnS2/SnS heterostructure PENG fabricated in this work can be employed to develop a flexible energy-harvesting device or an attachable self-powered sensor for monitoring pulse and human body movement.

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