期刊
ACS APPLIED MATERIALS & INTERFACES
卷 13, 期 37, 页码 44568-44576出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c13006
关键词
photovoltaic photodetector; solar-blind ultraviolet; (InxGa1-x)(2)O-3; band gap adjustment; 280 nm
资金
- Natural Science Foundation of Guangdong Province for Distinguished Young Scholars [2021B1515020105]
- Fund of the National Engineering Research Center for Optoelectronic Crystalline Materials [OCM-2020-07]
- Science and Technology Innovation Special Fund Project of Fujian Agricultural and Forestry University [CXZX2020101A]
By adjusting the ratio of In/Ga elements in the films, a high-quality (In0.11Ga0.89)(2)O-3 film with an absorption cutoff edge of 280 nm was obtained, which was used to construct a solar-blind ultraviolet photovoltaic detector with good response characteristics.
Ga2O3 is a popular material for research on solar-blind ultraviolet detectors. However, its absorption cutoff edge is 253 nm, which is not an ideal cutoff edge of 280 nm. In this work, by adjusting the ratio of In/Ga elements in the films, a high-quality (In0.11Ga0.89)(2)O-3 film with an absorption cutoff edge of 280 nm was obtained, which owns a uniform surface and preferred orientation. On this basis, a solar-blind ultraviolet photovoltaic detector was constructed based on the Pt/(In0.11Ga0.89)(2)O-3/n-Si heterojunction. When the device is exposed to 254 nm UV light, its open-circuit voltage (V-OC) can reach 354 mV. Under 0 V bias, the device has a responsivity of 0.48 mA/W with a rise time of 0.47 s and a decay time of 0.37 s; under -7 V bias, the device achieves a responsivity of 16.96 mA/W with a rise time of 0.17 s and a decay time of 0.33 s. The spectral response characteristics of the device show that it has a selective response to solar-blind ultraviolet light (cutoff wavelength is 280 nm) with a rejection ratio (R-254 nm/R-310 nm), which is greater by more than two orders of magnitude. This work provides a good reference for adjusting the band gap of Ga2O3-based films and broadening their application fields.
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