期刊
ACS APPLIED MATERIALS & INTERFACES
卷 13, 期 22, 页码 26180-26186出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c04912
关键词
ferroelectric; BiFeO3; injected current; mechanical force; FeRAM
资金
- China Scholarship Council
- National Natural Science Foundation of China [U1932125, U1832104, 92066203]
- Foundation for Basic and Applied Basic Research of Guangdong Province [2020A1515010996]
- Project for Guangdong Province Universities and Colleges Pearl River Scholar Funded Scheme 2018
- Guangdong Science and Technology Project-International Cooperation [2019A050510036]
- Engineering and Physical Sciences Research Council [EP/S037179/1]
- Department for Economy-NI through the U.S.-Ireland Research and Development Partnership Programme [USI-082]
- Science Foundation Ireland (SFI) [SFI/14/US/I3113, SFI/17/CDA/4637]
- EPSRC [EP/S037179/1] Funding Source: UKRI
Observation of significantly enhanced injection currents induced by polarization switching in BiFeO3 thin films via conductive atomic force microscopy. The injected current can be effectively modulated by applying mechanical force, increasing the peak current by 2-3 orders of magnitude. This mechanical modulation may be attributed to changes in barrier height and interfacial layer width induced by mechanical force.
When scaling the lateral size of a ferroelectric random access memory (FeRAM) device down to the nanometer range, the polarization switching-induced displacement current becomes small and challenging to detect, which greatly limits the storage density of FeRAM. Here, we report the observation of significantly enhanced injection currents, much larger than typical switching currents, induced by polarization switching in BiFeO3 thin films via conductive atomic force microscopy. Interestingly, this injected current can be effectively modulated by applying mechanical force. As the loading force increases from similar to 50 to similar to 750 nN, the magnitude of the injected current increases and the critical voltage to trigger the current injection decreases. Notably, changing the loading force by an order of magnitude increases the peak current by 2-3 orders of magnitude. The mechanically boosted injected current could be useful for the development of high-density FeRAM devices. The mechanical modulation of the injected current may be attributed to the mechanical force-induced changes in the barrier height and interfacial layer width.
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