4.8 Article

Fabrication of 2D PdSe2/3D CdTe Mixed-Dimensional van der Waals Heterojunction for Broadband Infrared Detection

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 13, 期 35, 页码 41791-41801

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c11277

关键词

palladium diselenide; cadmium telluride; mixed dimensional; vdW heterojunction; infrared photodetector

资金

  1. National Natural Science Foundation of China [U2004165, 51702017, 11974016]
  2. Natural Science Foundation of Henan Province, China [202300410376]
  3. Research Grants Council of Hong Kong, China [GRF 152093/18E]
  4. Hong Kong Polytechnic University [1-ZVGH]

向作者/读者索取更多资源

The study successfully fabricated a PdSe2/CdTe mixed-dimensional van der Waals heterojunction capable of detecting long-wave infrared radiation at room temperature. The device has a fast response rate, high responsivity, and reasonable specific detectivity, making it suitable for detecting short pulse infrared signals and highly sensitive to polarized infrared light signals.
Room-temperature infrared photodetectors are in great demand because of their vitally important applications in the military and civilian fields, which has inspired intensive studies in recent decades. Here, we present the fabrication of a large-size PdSe2/CdTe mixed-dimensional van der Waals (vdW) heterojunction for room-temperature infrared detection. Taking advantage of the wide light absorption of the multilayer PdSe2, high-quality vdW interface, and unique mixed-dimensional device geometry, the present device is capable of detecting an ultrawide light up to long-wave infrared (LWIR) of 10.6 mu m at room temperature. In addition, our photodetector exhibits a good capability to follow short pulse infrared signals with a quick response rate of 70 ns, a large responsivity of 324.7 mA/W, and a reasonable specific detectivity of 3.3 x 10(12) Jones. Significantly, the assembled photodetector is highly sensitive to a polarized infrared light signal with a decent polarization sensitivity of 4.4. More importantly, an outstanding LWIR imaging capability based on the PdSe2/CdTe vdW heterojunction at nonrefrigeration condition is demonstrated. Our work paves a novel route for the design of highly polarization-sensitive, room-temperature infrared photodetectors.

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