期刊
ACS APPLIED MATERIALS & INTERFACES
卷 13, 期 33, 页码 39595-39605出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c11014
关键词
memory; 2D MXene; oxygen adsorption; RRAMs; digital comparator
资金
- National Natural Science Foundation of China [61974093]
- Guangdong Province Special Support Plan for High-Level Talents [2017TQ04X082]
- Guangdong Provincial Department of Science and Technology [2018B030306028]
- Science and Technology Innovation Commission of Shenzhen [RCYX20200714114524157, JCYJ20180507182042530, JCYJ20180507182000722]
- NTUT-SZU Joint Research Program
- Natural Science Foundation of SZU
The study prepared an optoelectronic RRAM based on AMT through a hydrothermal oxidation process, and successfully demonstrated a 4-bit digital comparator that can replace traditional logic gates. AMT shows great potential and application value in the field of optoelectronic data storage.
Two-dimensional MXene has enormous potential for application in industry and academia owing to its surface hydrophilicity and excellent electrochemical properties. However, the application of MXene in optoelectronic memory and logical computing is still facing challenges. In this study, an optoelectronic resistive random access memory (RRAM) based on silver nanoparticles (Ag NPs)@MXene-TiO2 nanosheets (AMT) was prepared through a low-cost and facile hydrothermal oxidation process. The fabricated device exhibited a typical bipolar switching behavior and controllable SET voltage. Furthermore, we successfully demonstrated a 4-bit in-memory digital comparator with AMT RRAMs, which can replace five logic gates in a traditional approach. The AMT-based digital comparator may open the door for future integrated functions and applications in optoelectronic data storage and simplify the complex logic operations.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据